
Proceedings Paper
Multi-mJ, kHz picosecond deep UV source based on a frequency-quadrupled cryogenic Yb:YAG laserFormat | Member Price | Non-Member Price |
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Paper Abstract
We report on the development of a 2.74-mJ, ~4.2 ps, ~258 nm deep-ultraviolet (DUV) source at 1 kHz based on frequency quadrupling of ~32 mJ, 8.4 ps, ~1030 nm near-infrared (NIR) laser pulses with an excellent beam profile, generated from a diode-pumped, ultrafast hybrid Yb-doped chirped-pulse amplification laser system. We have used a two-stage second harmonic generation scheme at LBO (NIR-to-green) and BBO crystals (green-to-DUV), respectively, to achieve the fourth-harmonic generation (FHG). The NIR-to-DUV conversion efficiency of ~10% in the FHG is obtained. The peak power of the produced DUV laser pulses is as high as 0.56 GW. The beam profiles at near-field and far-field are found to be excellent and the M2 value is measured as ~2.6. We also present the systematic parameter study on the optimization of DUV generation. To our best knowledge, this is the most energetic DUV generation from a diodepumped solid-state laser at kHz repetition rates.
Paper Details
Date Published: 12 May 2015
PDF: 8 pages
Proc. SPIE 9513, High-Power, High-Energy, and High-Intensity Laser Technology II, 95130U (12 May 2015); doi: 10.1117/12.2179937
Published in SPIE Proceedings Vol. 9513:
High-Power, High-Energy, and High-Intensity Laser Technology II
Joachim Hein, Editor(s)
PDF: 8 pages
Proc. SPIE 9513, High-Power, High-Energy, and High-Intensity Laser Technology II, 95130U (12 May 2015); doi: 10.1117/12.2179937
Show Author Affiliations
Kyung-Han Hong, Massachusetts Institute of Technology (United States)
Chun-Lin Chang, Massachusetts Institute of Technology (United States)
Peter Krogen, Massachusetts Institute of Technology (United States)
Houkun Liang, Massachusetts Institute of Technology (United States)
Chun-Lin Chang, Massachusetts Institute of Technology (United States)
Peter Krogen, Massachusetts Institute of Technology (United States)
Houkun Liang, Massachusetts Institute of Technology (United States)
Gregory J. Stein, Massachusetts Institute of Technology (United States)
Jeffrey Moses, Massachusetts Institute of Technology (United States)
Chien-Jen Lai, Massachusetts Institute of Technology (United States)
Franz X. Kärtner, Massachusetts Institute of Technology (United States)
Ctr. for Free-Electron Laser Science (Germany)
Univ. Hamburg (Germany)
Jeffrey Moses, Massachusetts Institute of Technology (United States)
Chien-Jen Lai, Massachusetts Institute of Technology (United States)
Franz X. Kärtner, Massachusetts Institute of Technology (United States)
Ctr. for Free-Electron Laser Science (Germany)
Univ. Hamburg (Germany)
Published in SPIE Proceedings Vol. 9513:
High-Power, High-Energy, and High-Intensity Laser Technology II
Joachim Hein, Editor(s)
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