High-quality InAs_1-xSb_x films with x=0.06 have been successfully grown on InAs (100) substrates by liquid phase epitaxy. Two methods are used to characterize the electrical properties of InAsSb film. One is to grow InAsSb epilayer on p-type InAs substrate, which, in combination with the n-type epilayer, forms a p-n junction to prevent the parallel conduction from the substrate. The other is that both the conductive InAs substrate and the dislocation layer between InAs and InAsSb are removed completely by chemical mechanical polishing method to get InAsSb film glued onto insulating sapphire substrate. The influence of conductive InAs substrate on the electrical properties of InAsSb film is eliminated effectively.

Date Published: 13 April 2015
PDF: 6 pages
Proc. SPIE 9522, Selected Papers from Conferences of the Photoelectronic Technology Committee of the Chinese Society of Astronautics 2014, Part II, 952216 (13 April 2015); doi: 10.1117/12.2179766

Published in SPIE Proceedings Vol. 9522:
Selected Papers from Conferences of the Photoelectronic Technology Committee of the Chinese Society of Astronautics 2014, Part II
Xiangwan Du; Jennifer Liu; Dianyuan Fan; Jialing Le; Yueguang Lv; Jianquan Yao; Weimin Bao; Lijun Wang, Editor(s)