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Proceedings Paper

ZnO/ZnMgO multiple quantum well light polarization sensitive photodetectors
Author(s): A. Hierro; G. Tabares; M. Lopez-Ponce; E. Muñoz; A. Kurtz; B. Vinter; J. M. Chauveau
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Paper Abstract

We review in this paper the application of ZnO/(Zn,Mg)O quantum wells to the photodetection of the polarization state of UV light. This photodetection is achieved by using the natural anisotropy that exists in non-polar ZnO/(Zn,Mg)O quantum wells, which separates the excitonic absorption from the three valence bands to the conduction band depending on the incident light polarization. The device structures covered here consist of Schottky photodiodes on a- and m-plane orientations, grown by molecular beam epitaxy on ZnO or sapphire substrates, and are analyzed as a function of the incident light polarization.

Paper Details

Date Published: 13 March 2015
PDF: 7 pages
Proc. SPIE 9364, Oxide-based Materials and Devices VI, 93641H (13 March 2015); doi: 10.1117/12.2179728
Show Author Affiliations
A. Hierro, Univ. Politécnica de Madrid (Spain)
G. Tabares, Univ. Politécnica de Madrid (Spain)
M. Lopez-Ponce, Univ. Politécnica de Madrid (Spain)
E. Muñoz, Univ. Politécnica de Madrid (Spain)
A. Kurtz, Univ. Politécnica de Madrid (Spain)
B. Vinter, CRHEA, CNRS, Univ. de Nice Sophia Antipolis (France)
J. M. Chauveau, CRHEA, CNRS, Univ. de Nice Sophia Antipolis (France)

Published in SPIE Proceedings Vol. 9364:
Oxide-based Materials and Devices VI
Ferechteh H. Teherani; David C. Look; David J. Rogers, Editor(s)

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