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Proceedings Paper

Growth and morphology of lead tin selenide for MWIR detectors
Author(s): Christopher Cooper; Pietro Strobbia; Emily Schultheis; Narasimha Prasad; Bradley Arnold; Fow-Sen Choa; Narsingh B. Singh
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Paper Abstract

A great deal of research has been performed on developing room temperature mid wave infrared (MWIR) and long wave infrared (LWIR) detectors to replace very costly mercury cadmium telluride based detectors. Among the more studied materials for high operating temperature detectors, PbSe and PbSe-type heavy metal selenides have been grown in the bulk, thin film and nano crystal morphologies. To better understand the effects of the substrate on the properties of these thin films, we have deposited lead selenide by physical vapor transport (PVT) method on highresistivity Si substrates and studied the characteristics of the film. Growth on silicon and glass substrates showed different morphologies compared to pure lead selenide material. It was seen that materials grown on a glass substrate possessed different morphology after annealing. FTIR was used to calculate bandgap information comparison with undoped PbSe. We will describe the details of the growth method, effect of substrate on nucleation and morphology of the pure and lead selenide material and band gap comparisons between substrates.

Paper Details

Date Published: 13 May 2015
PDF: 5 pages
Proc. SPIE 9491, Sensors for Extreme Harsh Environments II, 949104 (13 May 2015); doi: 10.1117/12.2179724
Show Author Affiliations
Christopher Cooper, Univ. of Maryland (United States)
Pietro Strobbia, Univ. of Maryland (United States)
Emily Schultheis, Univ. of Maryland (United States)
Narasimha Prasad, NASA Langley Research Ctr. (United States)
Bradley Arnold, Univ. of Maryland (United States)
Fow-Sen Choa, Univ. of Maryland (United States)
Narsingh B. Singh, Univ. of Maryland (United States)

Published in SPIE Proceedings Vol. 9491:
Sensors for Extreme Harsh Environments II
Debbie G. Senesky; Sachin Dekate, Editor(s)

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