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Proceedings Paper

Investigation on the interface of polysilicon/oxide in CCD image sensors
Author(s): Naiman L.; Renhao L.; Chunlin L.
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Paper Abstract

The morphology of interface between polysilicon and its thermal oxide is very important for the fabrication of charge-coupled device (CCD) image sensors. Poor quality of polysilicon/oxide interface may lead to leakage current, low charge transfer efficiency, image deficiency, and then reduce the product yield and device reliability. In this paper, the effects polysilicon/oxide interface morphylogy on thermal oxide breakdown characteristics of polysilicon grown by low-pressure chemical vapor deposition (LPCVD) are studied by means of scanning electron microscopy (SEM) and electrical measurement. The breakdown characteristics of the oxide are related to the polysilicon/oxide interface smoothness. As the smoothness of polysilicon/oxide interface becomes worse, the breakdown strength of thermal oxide of the polysilicon decreases. Doping process of polysilicon remarkably affects the smoothness of polysilicon/oxide interface and the breakdown strength of the oxide. Saturated doping of polysilicon improves the polysilicon/oxide interface smoothness, so the breakdown strength of polysilicon may increase.

Paper Details

Date Published: 13 April 2015
PDF: 5 pages
Proc. SPIE 9522, Selected Papers from Conferences of the Photoelectronic Technology Committee of the Chinese Society of Astronautics 2014, Part II, 95220L (13 April 2015);
Show Author Affiliations
Naiman L., Chongqing Optoelectronics Research Institute (China)
Renhao L., Chongqing Optoelectronics Research Institute (China)
Chunlin L., Chongqing Optoelectronics Research Institute (China)


Published in SPIE Proceedings Vol. 9522:
Selected Papers from Conferences of the Photoelectronic Technology Committee of the Chinese Society of Astronautics 2014, Part II
Xiangwan Du; Jennifer Liu; Dianyuan Fan; Jialing Le; Yueguang Lv; Jianquan Yao; Weimin Bao; Lijun Wang, Editor(s)

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