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Proceedings Paper

Characterization of a dispersion-controlled approach to surface profilometry on wafers using a white-light interferometer
Author(s): Ch. Taudt; A. Augenstein; T. Baselt; H. Assmann; A. Greiner; E. Koch; P. Hartmann
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Paper Abstract

In this paper an alternative approach to surface profilometry based on a combined time-spectral domain white-light interferometer is shown. Within the setup a reference interferometer arm contains of a fixed mirror and a material with known dispersion while the object arm is aligned to a sample e.g. a wafer surface. Under the usage of a translation stage different height profiles in the nm - regime are emulated and measured accordingly with the interferometer. The signal analysis and calculation of interesting parameters is performed by a fitting algorithm. This algorithm is based on theoretical considerations on a dispersion affected interferometer which are also shown in the work. The experimental configuration allows a measurement range of 12 μm while a theoretical average resolution of 28 nm is possible. In the results it is observable that the measurement of height changes on a surface with an RMS error of 18 nm at the maximum is possible. In conclusion sources of error and further improvement possibilities are discussed.

Paper Details

Date Published: 21 May 2015
PDF: 6 pages
Proc. SPIE 9517, Smart Sensors, Actuators, and MEMS VII; and Cyber Physical Systems, 95170W (21 May 2015); doi: 10.1117/12.2179022
Show Author Affiliations
Ch. Taudt, Univ. of Applied Sciences Zwickau (Germany)
Technische Univ. Dresden (Germany)
A. Augenstein, Univ. of Pittsburgh (United States)
T. Baselt, Univ. of Applied Sciences Zwickau (Germany)
H. Assmann, Infineon Technologies Dresden GmbH (Germany)
A. Greiner, Infineon Technologies Dresden GmbH (Germany)
E. Koch, Technische Univ. Dresden (Germany)
P. Hartmann, Univ. of Applied Sciences Zwickau (Germany)

Published in SPIE Proceedings Vol. 9517:
Smart Sensors, Actuators, and MEMS VII; and Cyber Physical Systems
José Luis Sánchez-Rojas; Riccardo Brama, Editor(s)

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