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Proceedings Paper

Pixel isolation in Type-II InAs/GaSb superlattice photodiodes by femto-second laser annealing
Author(s): Sona Das; Utpal Das; Nutan Gautam; Sanjay Krishna
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Paper Abstract

A 775 nm femto-second laser annealed approach for the inter-pixel isolation, without mesa etching, to reduce dark currents of type-II InAs/GaSb superlattice photodiodes is presented. A greater than two fold improvement of the pixel isolation and a corresponding reduction in the dark current are observed for laser annealed superlattice photodiodes with a 5.5 μm cutoff wavelength, operating at 10K. A higher band gap barrier material from the superlattice structure in the inter-pixel region is expected to form after femto-second laser annealing, which has been explained on the basis of a superlattice inter-diffusion model. The increase in inter-pixel barrier height at 10K is estimated to be ~ 4 meV in the laser annealed superlattice photodiodes.

Paper Details

Date Published: 1 May 2015
PDF: 6 pages
Proc. SPIE 9516, Integrated Optics: Physics and Simulations II, 95160W (1 May 2015); doi: 10.1117/12.2178995
Show Author Affiliations
Sona Das, Indian Institute of Technology Kanpur (India)
Utpal Das, Indian Institute of Technology Kanpur (India)
Nutan Gautam, The Univ. of New Mexico (United States)
JDSU (Uniited States)
Sanjay Krishna, The Univ. of New Mexico (United States)

Published in SPIE Proceedings Vol. 9516:
Integrated Optics: Physics and Simulations II
Pavel Cheben; Jiří Čtyroký; Iñigo Molina-Fernández, Editor(s)

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