Proceedings Paper
Reduced QCSE in InGaN-based LEDs by patterned sapphire substrates with enlarging the diameter of hexagonal hole| Format | Member Price | Non-Member Price |
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Paper Abstract
This paper reports the growths of InGaN-based light-emitting diodes (LEDs) on the patterned sapphire substrates (PSSs) with enlarging the diameter of hexagonal hole can reduce the related quantum-confined Stark effect (QCSE) within multiple-quantum wells (MQWs), resulting in that the PL relative intensity is enhanced by up to 95% as compared to the conventional one.
Paper Details
Date Published: 1 June 2015
PDF: 7 pages
Proc. SPIE 9519, Nanotechnology VII, 95190X (1 June 2015); doi: 10.1117/12.2178768
Published in SPIE Proceedings Vol. 9519:
Nanotechnology VII
Ion M. Tiginyanu, Editor(s)
PDF: 7 pages
Proc. SPIE 9519, Nanotechnology VII, 95190X (1 June 2015); doi: 10.1117/12.2178768
Show Author Affiliations
Yen-Pu Chen, National Taiwan Univ. (Taiwan)
Vincent Su, National Taiwan Univ. (Taiwan)
Ming-Lun Lee, National Taiwan Univ. (Taiwan)
Yao-Hong You, National Taiwan Univ. (Taiwan)
Vincent Su, National Taiwan Univ. (Taiwan)
Ming-Lun Lee, National Taiwan Univ. (Taiwan)
Yao-Hong You, National Taiwan Univ. (Taiwan)
Po-Hsun Chen, National Taiwan Univ. (Taiwan)
Ray-Ming Lin, Chang Gung Univ. (Taiwan)
Chieh-Hsiung Kuan, National Taiwan Univ. (Taiwan)
Ray-Ming Lin, Chang Gung Univ. (Taiwan)
Chieh-Hsiung Kuan, National Taiwan Univ. (Taiwan)
Published in SPIE Proceedings Vol. 9519:
Nanotechnology VII
Ion M. Tiginyanu, Editor(s)
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