Proceedings Paper
Metal silicide/Si thin-film Schottky-diode bolometers| Format | Member Price | Non-Member Price |
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Paper Abstract
Recently, we have demonstrated Ni silicide/poly-Si diodes as a budget alternative to SOI-diode temperature sensors in uncooled microbolometer FPAs. This paper introduces a solution still more suitable for industry: We have developed PtSi/poly-Si Schottky diodes for microbolometers. Ease of integration of the PtSi/poly-Si diode formation process into the CMOS technology, in analogy with the internal photoemission PtSi/Si IR FPAs, is the merit of the PtSi/poly-Si sensors. Now we demonstrate PtSi/poly-Si diode microbolometers and propose them as a promising solution for focal plane arrays.
Paper Details
Date Published: 1 June 2015
PDF: 9 pages
Proc. SPIE 9519, Nanotechnology VII, 95190K (1 June 2015); doi: 10.1117/12.2178487
Published in SPIE Proceedings Vol. 9519:
Nanotechnology VII
Ion M. Tiginyanu, Editor(s)
PDF: 9 pages
Proc. SPIE 9519, Nanotechnology VII, 95190K (1 June 2015); doi: 10.1117/12.2178487
Show Author Affiliations
Vladimir A. Yuryev, A.M. Prokhorov General Physics Institute (Russian Federation)
Kirill V. Chizh, A.M. Prokhorov General Physics Institute (Russian Federation)
Kirill V. Chizh, A.M. Prokhorov General Physics Institute (Russian Federation)
Valery V. Chapnin, A.M. Prokhorov General Physics Institute (Russian Federation)
Victor P. Kalinushkin, A.M. Prokhorov General Physics Institute (Russian Federation)
Victor P. Kalinushkin, A.M. Prokhorov General Physics Institute (Russian Federation)
Published in SPIE Proceedings Vol. 9519:
Nanotechnology VII
Ion M. Tiginyanu, Editor(s)
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