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Proceedings Paper

Patterning in the era of atomic scale fidelity
Author(s): Thorsten Lill; Samantha Tan; Keren J. Kanarik; Yoshie Kimura; Gowri Kamarthy; Meihua Shen; Vahid Vahedi; Jeffrey Marks; Richard A. Gottscho
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Paper Abstract

Relentless scaling of advanced integrated devices drives feature dimensions towards values which can be expressed in small multiples of the lattice spacing of silicon. One of the consequences of dealing with features on such an atomic scale is that surface properties start to play an increasingly important role. To encompass both dimensional as well as compositional and structural control, we introduce the term “atomic scale fidelity.” In this paper, we will discuss the challenges as well as new solutions to achieve atomic scale fidelity for patterning etch processes. Fidelity of critical dimensions (CD) across the wafer is improved by means of the Hydra Uniformity System. Wafer, chip and feature level atomic scale fidelity such as etch rate uniformity, aspect ratio dependent etching (ARDE) /1/, selectivity and surface damage can be addressed with emerging atomic layer etching (ALE) approaches /2/.

Paper Details

Date Published: 17 March 2015
PDF: 5 pages
Proc. SPIE 9428, Advanced Etch Technology for Nanopatterning IV, 942809 (17 March 2015); doi: 10.1117/12.2178326
Show Author Affiliations
Thorsten Lill, Lam Research Corp. (United States)
Samantha Tan, Lam Research Corp. (United States)
Keren J. Kanarik, Lam Research Corp. (United States)
Yoshie Kimura, Lam Research Corp. (United States)
Gowri Kamarthy, Lam Research Corp. (United States)
Meihua Shen, Lam Research Corp. (United States)
Vahid Vahedi, Lam Research Corp. (United States)
Jeffrey Marks, Lam Research Corp. (United States)
Richard A. Gottscho, Lam Research Corp. (United States)

Published in SPIE Proceedings Vol. 9428:
Advanced Etch Technology for Nanopatterning IV
Qinghuang Lin; Sebastian U. Engelmann; Ying Zhang, Editor(s)

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