Proceedings Paper
Comparison of bare and sol-gel coated of mitigated site on fused silica| Format | Member Price | Non-Member Price |
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Paper Abstract
The performance of mitigated site coated with antireflective (AR) coating is investigated, and its
discrepancy is also investigated by comparing the bare site with substrate from surface morphology and
profile, transmittance and laser induced damage threshold (LIDT). The results indicated that more SiO2 sol
will be deposited in the crater of mitigated site during the dipping process, while the coated site does not
seriously influence the performance of the entire sample. The LIDT results indicate that both the coated
substrate and mitigated site are lower than that of un-coated substrate and mitigated site.
Keywords: fused silica; mitigated site; coating; sol-gel.
Paper Details
Date Published: 4 May 2015
PDF: 6 pages
Proc. SPIE 9543, Third International Symposium on Laser Interaction with Matter, 95430M (4 May 2015); doi: 10.1117/12.2177808
Published in SPIE Proceedings Vol. 9543:
Third International Symposium on Laser Interaction with Matter
Yury M. Andreev; Zunqi Lin III; Xiaowu Ni; Xisheng Ye, Editor(s)
PDF: 6 pages
Proc. SPIE 9543, Third International Symposium on Laser Interaction with Matter, 95430M (4 May 2015); doi: 10.1117/12.2177808
Show Author Affiliations
Y. Jiang, Southwest Univ. of Science and Technology (China)
X. Y. Mu, Southwest Univ. of Science and Technology (China)
R. Qiu, Southwest Univ. of Science and Technology (China)
X. Y. Mu, Southwest Univ. of Science and Technology (China)
R. Qiu, Southwest Univ. of Science and Technology (China)
Y. J. Yang, Southwest Univ. of Science and Technology (China)
Q. Zhou, Southwest Univ. of Science and Technology (China)
X. Gao, Southwest Univ. of Science and Technology (China)
Q. Zhou, Southwest Univ. of Science and Technology (China)
X. Gao, Southwest Univ. of Science and Technology (China)
Published in SPIE Proceedings Vol. 9543:
Third International Symposium on Laser Interaction with Matter
Yury M. Andreev; Zunqi Lin III; Xiaowu Ni; Xisheng Ye, Editor(s)
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