Two-dimensional (2D) semiconductors with high carrier mobilities and sizeable bandgap are desirable for future high-speed and low power mechanically flexible nanoelectronics. In this work, we report encapsulated bottom-gated black phosphorus (BP) field-effect transistors (FETs) on flexible polyimide affording maximum carrier mobility of about 310cm²/V∙s and current on/off ratio exceeding 10³. Essential circuits of flexible electronic systems enabled by the device ambipolar functionality, high-mobility and current saturation are demonstrated in this work, including digital inverter, frequency doubler, and analog amplifiers featuring a voltage gain of ~8.7, which is the state-of-the-art value for flexible 2D semiconductor based amplifiers. In addition, we demonstrate the single FET based flexible BP amplitude-modulated (AM) demodulator, an active stage in radio receivers.

Date Published: 22 May 2015
PDF: 6 pages
Proc. SPIE 9467, Micro- and Nanotechnology Sensors, Systems, and Applications VII, 94670A (22 May 2015); doi: 10.1117/12.2177563

Published in SPIE Proceedings Vol. 9467:
Micro- and Nanotechnology Sensors, Systems, and Applications VII
Thomas George; Achyut K. Dutta; M. Saif Islam, Editor(s)