
Proceedings Paper
Structural, optical, electrical and morphological study of transparent p-NiO/n-ZnO heterojunctions grown by PLDFormat | Member Price | Non-Member Price |
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Paper Abstract
NiO/ZnO heterostructures were fabricated on FTO/glass and bulk hydrothermal ZnO substrates by pulsed laser
deposition. X-Ray diffraction and Room Temperature (RT) Raman studies were consistent with the formation of (0002)
oriented wurtzite ZnO and (111) oriented fcc NiO. RT optical transmission studies revealed bandgap energy values of
~3.70 eV and ~3.30 eV for NiO and ZnO, respectively and more than 80% transmission for the whole
ZnO/NiO/FTO/glass stack over the majority of the visible spectrum. Lateral p-n heterojunction mesas (~6mm x 6mm)
were fabricated using a shadow mask during PLD growth. n-n and p-p measurements showed that Ti/Au contacting
gave an Ohmic reponse for the NiO, ZnO and FTO. Both heterojunctions had rectifying I/V characteristics. The junction
on FTO/glass gave forward bias currents (243mA at +10V) that were over 5 orders of magnitude higher than those for
the junction formed on bulk ZnO. At ~ 10-7 A (for 10V of reverse bias) the heterojunction leakage current was
approximately two orders of magnitude lower on the bulk ZnO substrate than on FTO. Overall, the lateral p-NiO/n-
ZnO/FTO/glass device proved far superior to that formed by growing p-NiO directly on the bulk n-ZnO substrate and
gave a combination of electrical performance and visible wavelength transparency that could predispose it for use in
various third generation transparent electronics applications.
Paper Details
Date Published: 24 March 2015
PDF: 11 pages
Proc. SPIE 9364, Oxide-based Materials and Devices VI, 93641O (24 March 2015); doi: 10.1117/12.2177427
Published in SPIE Proceedings Vol. 9364:
Oxide-based Materials and Devices VI
Ferechteh H. Teherani; David C. Look; David J. Rogers, Editor(s)
PDF: 11 pages
Proc. SPIE 9364, Oxide-based Materials and Devices VI, 93641O (24 March 2015); doi: 10.1117/12.2177427
Show Author Affiliations
V. E. Sandana, Nanovation (France)
D. J. Rogers, Nanovation (France)
F. Hosseini Teherani, Nanovation (France)
P. Bove, Nanovation (France)
N. Ben Sedrine, Univ. de Aveiro (Portugal)
D. J. Rogers, Nanovation (France)
F. Hosseini Teherani, Nanovation (France)
P. Bove, Nanovation (France)
N. Ben Sedrine, Univ. de Aveiro (Portugal)
M. R. Correia, Univ. de Aveiro (Portugal)
T. Monteiro, Univ. de Aveiro (Portugal)
R. McClintock, Northwestern Univ. (United States)
M. Razeghi, Northwestern Univ. (United States)
T. Monteiro, Univ. de Aveiro (Portugal)
R. McClintock, Northwestern Univ. (United States)
M. Razeghi, Northwestern Univ. (United States)
Published in SPIE Proceedings Vol. 9364:
Oxide-based Materials and Devices VI
Ferechteh H. Teherani; David C. Look; David J. Rogers, Editor(s)
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