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Proceedings Paper

Determination of stress in silicon wafers using Raman spectroscopy
Author(s): M. De Biasio; L. Neumaier; N. Vollert; E. Geier; M. Roesner; Ch. Hirschl; M. Kraft
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Paper Abstract

With a strong industrial trend towards using thin silicon in semiconductor devices, process legacy-induced stresses are matter of increasing practical importance. A key problem here is a lack of suitable metrology equipment for measuring inherent substrate material stresses in the manufacturing line. To overcome this, the use of Raman microspectrometry as a tool for measuring stress levels and distributions quantitatively on entire productive wafers was researched. Combining model cases, theoretical considerations and real-world samples, it could be shown that Raman can provide the necessary analytical accuracy and reliability, allowing to relate ensuing stress states e.g. to different wafer thinning process parameters.

Paper Details

Date Published: 3 June 2015
PDF: 6 pages
Proc. SPIE 9482, Next-Generation Spectroscopic Technologies VIII, 94820R (3 June 2015); doi: 10.1117/12.2176994
Show Author Affiliations
M. De Biasio, Carinthian Tech Research AG (Austria)
L. Neumaier, Carinthian Tech Research AG (Austria)
N. Vollert, Carinthian Tech Research AG (Austria)
E. Geier, Infineon Technologies Austria AG (Austria)
M. Roesner, Infineon Technologies Austria AG (Austria)
Ch. Hirschl, Carinthian Tech Research AG (Austria)
M. Kraft, Carinthian Tech Research AG (Austria)

Published in SPIE Proceedings Vol. 9482:
Next-Generation Spectroscopic Technologies VIII
Mark A. Druy; Richard A. Crocombe; David P. Bannon, Editor(s)

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