Proceedings Paper
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Paper Abstract
Development of infrared and sub-terahertz radiation detectors at the same sensitive elements on the base of mercurycadmium- telluride (MCT) is reported. Two-color un-cooled and cooled to 78 K narrow-gap MCT semiconductor thin layers, grown by liquid phase epitaxy or molecular beam epitaxy method on high resistivity CdZnTe or GaAs substrates, with bow-type antennas were considered both as sub-terahertz direct detection bolometers and 3 to 10 μm infrared photoconductors. Their room temperature noise equivalent power (NEP) at frequency ~ 140 GHz and signal-to-noise ratio (S/N) in the spectral sensitivity maximum under the monochromatic (spectral resolution of ~0.1 μm) globar illumination were reached NEP ~4.5*10-10 W/Hz1/2 and S/N~50, respectively.
Paper Details
Date Published: 13 May 2015
PDF: 6 pages
Proc. SPIE 9483, Terahertz Physics, Devices, and Systems IX: Advanced Applications in Industry and Defense, 94830V (13 May 2015); doi: 10.1117/12.2176854
Published in SPIE Proceedings Vol. 9483:
Terahertz Physics, Devices, and Systems IX: Advanced Applications in Industry and Defense
Mehdi F. Anwar; Thomas W. Crowe; Tariq Manzur, Editor(s)
PDF: 6 pages
Proc. SPIE 9483, Terahertz Physics, Devices, and Systems IX: Advanced Applications in Industry and Defense, 94830V (13 May 2015); doi: 10.1117/12.2176854
Show Author Affiliations
Fiodor F. Sizov, V.E. Lashkaryov Institute of Semiconductor Physics (Ukraine)
Vyacheslav V. Zabudsky, V.E. Lashkaryov Institute of Semiconductor Physics (Ukraine)
Sergey A. Dvoretsky, A.V. Rzhanov Institute of Semiconductor Physics (Russian Federation)
Vladimir A. Petryiakov, V.E. Lashkaryov Institute of Semiconductor Physics (Ukraine)
Aleksandr G. Golenkov, V.E. Lashkaryov Institute of Semiconductor Physics (Ukraine)
Vyacheslav V. Zabudsky, V.E. Lashkaryov Institute of Semiconductor Physics (Ukraine)
Sergey A. Dvoretsky, A.V. Rzhanov Institute of Semiconductor Physics (Russian Federation)
Vladimir A. Petryiakov, V.E. Lashkaryov Institute of Semiconductor Physics (Ukraine)
Aleksandr G. Golenkov, V.E. Lashkaryov Institute of Semiconductor Physics (Ukraine)
Katerina V. Andreyeva, V.E. Lashkaryov Institute of Semiconductor Physics (Ukraine)
Zinoviia F. Tsybrii, V.E. Lashkaryov Institute of Semiconductor Physics (Ukraine)
Anna V. Shevchik-Shekera, V.E. Lashkaryov Institute of Semiconductor Physics (Ukraine)
Ernesto Dieguez, Univ. Autónoma de Madrid (Spain)
Zinoviia F. Tsybrii, V.E. Lashkaryov Institute of Semiconductor Physics (Ukraine)
Anna V. Shevchik-Shekera, V.E. Lashkaryov Institute of Semiconductor Physics (Ukraine)
Ernesto Dieguez, Univ. Autónoma de Madrid (Spain)
Published in SPIE Proceedings Vol. 9483:
Terahertz Physics, Devices, and Systems IX: Advanced Applications in Industry and Defense
Mehdi F. Anwar; Thomas W. Crowe; Tariq Manzur, Editor(s)
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