We present the realization and optoelectronic characterization of p-n junctions based on two-dimensional semiconductors. Such junctions may be realized by lateral or vertical arrangement of atomically thin p-type and n-type materials. In particular, a WSe₂ monolayer p-n junction, formed by electrostatic doping using a pair of split gate electrodes, and a MoS₂/WSe₂ van der Waals type-II heterojunction are presented. Upon optical illumination, conversion of light into electrical energy occurs in both devices. Under forward bias, electrically driven light emission is achieved. Measurements of the electrical characteristics, the photovoltaic properties, and the gate voltage dependence of the photoresponse will be discussed.

Date Published: 22 May 2015
PDF: 6 pages
Proc. SPIE 9467, Micro- and Nanotechnology Sensors, Systems, and Applications VII, 946713 (22 May 2015); doi: 10.1117/12.2176848

Published in SPIE Proceedings Vol. 9467:
Micro- and Nanotechnology Sensors, Systems, and Applications VII
Thomas George; Achyut K. Dutta; M. Saif Islam, Editor(s)