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Proceedings Paper

InAs/Ga(In)Sb type-II superlattices short/middle dual color infrared detectors
Author(s): Yanli Shi; Rui Hu; Gongrong Deng; Wenjing He; Jiangmin Feng; Mingguo Fang; Xue Li; Jun Deng
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Paper Abstract

Short wavelength and middle wavelength dual color infrared detector were designed and prepared with InAs/Ga(In)Sb type-II superlattices materials. The Crosslight software was used to calculate the relation between wavelength and material parameter such as thickness of InAs, GaSb, then energy strucutre of 100 periods 8ML/8ML InAs/GaSb and the absorption wavelength was calculated. After fixing InAs/GaSb thickness parameter, devices with nBn and pin structure were designed and prepared to compare performance of these two structures. Comparison results showed both structure devices were available for high temperature operation which black detectivity under 200K were 7.9×108cmHz1/2/W for nBn and 1.9×109cmHz1/2/W for pin respectively. Considering the simultaneous readout requirement for further FPAs application the NIP/PIN InAs/GaSb dual-color structure was grown by MBE method. Both two mesas and one mesa devices structure were designed and prepared to appreciate the short/middle dual color devices. Cl2-based ICP etching combined with phosphoric acid based chemicals were utilized to form mesas, silicon dioxide was deposited via PECVD as passivation layer. Ti/Au was used as metallization. Once the devices were finished, the electro-optical performance was measured. Measurement results showed that optical spectrum response with peak wavelength of 2.7μm and 4.3μm under 77K temperature was gained, the test results agree well with calculated results. Peak detectivity was measured as 2.08×1011cmHz1/2/W and 6.2×1010cmHz1/2/W for short and middle wavelength infrared detector respectively. Study results disclosed that InAs/Ga(In)Sb type-II SLs is available for both short and middle wavelength infrared detecting with good performance by simply altering the thickness of InAs layer and GaSb layer.

Paper Details

Date Published: 4 June 2015
PDF: 8 pages
Proc. SPIE 9451, Infrared Technology and Applications XLI, 94510L (4 June 2015); doi: 10.1117/12.2176196
Show Author Affiliations
Yanli Shi, Kunming Institute of Physics (China)
Rui Hu, Kunming Institute of Physics (China)
Gongrong Deng, Kunming Institute of Physics (China)
Wenjing He, Kunming Institute of Physics (China)
Jiangmin Feng, Kunming Institute of Physics (China)
Mingguo Fang, Kunming Institute of Physics (China)
Xue Li, Kunming Institute of Physics (China)
Jun Deng, Beijing Univ. of Technology (China)

Published in SPIE Proceedings Vol. 9451:
Infrared Technology and Applications XLI
Bjørn F. Andresen; Gabor F. Fulop; Charles M. Hanson; Paul R. Norton, Editor(s)

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