Share Email Print
cover

Proceedings Paper

Scale-up of the chemical lift-off of (In)GaN-based p-i-n junctions from sapphire substrates using sacrificial ZnO template layers
Author(s): D. J. Rogers; S. Sundaram; Y. El Gmili; F. Hosseini Teherani; P. Bove; V. Sandana; P. L. Voss; A. Ougazzaden; A. Rajan; K. A. Prior; R. McClintock; M. Razeghi
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

(In)GaN p-i-n structures were grown by MOVPE on both GaN- and ZnO-coated c-sapphire substrates. XRD studies of the as-grown layers revealed that a strongly c-axis oriented wurtzite crystal structure was obtained on both templates and that there was a slight compressive strain in the ZnO underlayer which increased after GaN overgrowth. The InGaN peak position gave an estimate of 13.6at% for the indium content in the active layer. SEM and AFM revealed that the top surface morphologies were similar for both substrates, with an RMS roughness (5 μm x 5 μm) of about 10 nm. Granularity appeared slightly coarser (40nm for the device grown on ZnO vs 30nm for the device grown on the GaN template) however. CL revealed a weaker GaN near band edge UV emission peak and a stronger broad defect-related visible emission band for the structure grown on the GaN template. Only a strong ZnO NBE UV emission was observed for the sample grown on the ZnO template. Quarter-wafer chemical lift-off (CLO) of the InGaN-based p-i-n structures from the sapphire substrate was achieved by temporary-bonding the GaN surface to rigid glass support with wax and then selectively dissolving the ZnO in 0.1M HCl. XRD studies revealed that the epitaxial nature and strong preferential c-axis orientation of the layers had been maintained after lift-off. This demonstration of CLO scale-up, without compromising the crystallographic integrity of the (In)GaN p-i-n structure opens up the perspective of transferring GaN based devices off of sapphire substrates industrially.

Paper Details

Date Published: 24 March 2015
PDF: 8 pages
Proc. SPIE 9364, Oxide-based Materials and Devices VI, 936424 (24 March 2015); doi: 10.1117/12.2175897
Show Author Affiliations
D. J. Rogers, Nanovation (France)
S. Sundaram, Georgia Tech-CNRS (France)
Y. El Gmili, Georgia Tech-CNRS (France)
F. Hosseini Teherani, Nanovation (France)
P. Bove, Nanovation (France)
V. Sandana, Nanovation (France)
P. L. Voss, Georgia Tech-CNRS (France)
Georgia Tech-Lorraine
A. Ougazzaden, Georgia Tech-CNRS (France)
Georgia Tech-Lorraine
A. Rajan, Heriot-Watt Univ. (United Kingdom)
K. A. Prior, Heriot-Watt Univ. (United Kingdom)
R. McClintock, Northwestern Univ. (United States)
M. Razeghi, Northwestern Univ. (United States)


Published in SPIE Proceedings Vol. 9364:
Oxide-based Materials and Devices VI
Ferechteh H. Teherani; David C. Look; David J. Rogers, Editor(s)

© SPIE. Terms of Use
Back to Top