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Proceedings Paper

Numerical analysis of CdS/PbSe room temperature mid-infrared heterojunction photovoltaic detectors
Author(s): Binbin Weng; Jijun Qiu; Wanyin Ge; Zhisheng Shi
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Paper Abstract

Numerical analysis of a CdS/PbSe room-temperature heterojunction photovoltaic detector is discussed as to provide guidelines for practical improvement, based on the previous experimental exploration [1]. In our experiment work, the polycrystalline CdS film was prepared in hydro-chemical method on top of the single crystalline PbSe grown by molecular beam epitaxy method. The preliminary results demonstrated a 5.48×108 Jones peak detectivity at λ=4.7μm under zero-bias. However, the influence of some material and device parameters such as carrier concentration, interface recombination velocity remains uncertain. These parameters affect the built-in electric field and the carriers’ transportation properties, and consequently could have detrimental effect on the device performance of the CdS/PbSe detector. In this work, therefore, the numerical analysis is performed based on these parameters. The simulation results suggest that the device performance can be improved at least 4 times by increasing CdS concentration for two orders of magnitudes, and the device performance will degrade severely if the interface recombination speed is over 104 cm/s.

Paper Details

Date Published: 4 June 2015
PDF: 10 pages
Proc. SPIE 9451, Infrared Technology and Applications XLI, 945116 (4 June 2015); doi: 10.1117/12.2175813
Show Author Affiliations
Binbin Weng, The Univ. of Oklahoma (United States)
Jijun Qiu, The Univ. of Oklahoma (United States)
Wanyin Ge, The Univ. of Oklahoma (United States)
Zhisheng Shi, The Univ. of Oklahoma (United States)
Nanolight, Inc. (United States)

Published in SPIE Proceedings Vol. 9451:
Infrared Technology and Applications XLI
Bjørn F. Andresen; Gabor F. Fulop; Charles M. Hanson; Paul R. Norton, Editor(s)

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