Share Email Print

Proceedings Paper

The patterning center of excellence (CoE): an evolving lithographic enablement model
Author(s): Warren Montgomery; Jun Sung Chun; Michael Liehr; Michael Tittnich
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

As EUV lithography moves toward high-volume manufacturing (HVM), a key need for the lithography materials makers is access to EUV photons and imaging. The SEMATECH Resist Materials Development Center (RMDC) provided a solution path by enabling the Resist and Materials companies to work together (using SUNY Polytechnic Institute’s Colleges of Nanoscale Science and Engineering (SUNY Poly CNSE) -based exposure systems), in a consortium fashion, in order to address the need for EUV photons. Thousands of wafers have been processed by the RMDC (leveraging the SUNY Poly CNSE/SEMATECH MET, SUNY Poly CNSE Alpha Demo Tool (ADT) and the SEMATECH Lawrence Berkeley MET) allowing many of the questions associated with EUV materials development to be answered. In this regard the activities associated with the RMDC are continuing. As the major Integrated Device Manufacturers (IDMs) have continued to purchase EUV scanners, Materials companies must now provide scanner based test data that characterizes the lithography materials they are producing. SUNY Poly CNSE and SEMATECH have partnered to evolve the RMDC into “The Patterning Center of Excellence (CoE)”. The new CoE leverages the capability of the SUNY Poly CNSE-based full field ASML 3300 EUV scanner and combines that capability with EUV Microexposure (MET) systems resident in the SEMATECH RMDC to create an integrated lithography model which will allow materials companies to advance materials development in ways not previously possible.

Paper Details

Date Published: 13 March 2015
PDF: 12 pages
Proc. SPIE 9422, Extreme Ultraviolet (EUV) Lithography VI, 94221L (13 March 2015); doi: 10.1117/12.2175733
Show Author Affiliations
Warren Montgomery, College of Nanoscale Science and Engineering (United States)
Jun Sung Chun, College of Nanoscale Science and Engineering (United States)
Michael Liehr, College of Nanoscale Science and Engineering (United States)
Michael Tittnich, College of Nanoscale Science and Engineering (United States)

Published in SPIE Proceedings Vol. 9422:
Extreme Ultraviolet (EUV) Lithography VI
Obert R. Wood II; Eric M. Panning, Editor(s)

© SPIE. Terms of Use
Back to Top
Sign in to read the full article
Create a free SPIE account to get access to
premium articles and original research
Forgot your username?