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Proceedings Paper

Imaging performance of EUV lithography optics configuration for sub-9nm resolution
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Paper Abstract

New design solutions are available for high-NA EUV optics, maintaining simultaneously superior imaging performance and productivity below 9nm resolution by means of anamorphic imaging. We investigate the imaging properties of these new optics configurations by rigorous simulations, taking into account mask induced effects as well as characteristics of the new optics. We compare the imaging behavior to other, more traditional optics configurations, and show that the productivity gain of our new configurations is indeed obtained at excellent imaging performance.

Paper Details

Date Published: 16 March 2015
PDF: 9 pages
Proc. SPIE 9422, Extreme Ultraviolet (EUV) Lithography VI, 94221H (16 March 2015); doi: 10.1117/12.2175658
Show Author Affiliations
Jens Timo Neumann, Carl Zeiss SMT GmbH (Germany)
Matthias Rösch, Carl Zeiss SMT GmbH (Germany)
Paul Gräupner, Carl Zeiss SMT GmbH (Germany)
Sascha Migura, Carl Zeiss SMT GmbH (Germany)
Bernhard Kneer, Carl Zeiss SMT GmbH (Germany)
Winfried Kaiser, Carl Zeiss SMT GmbH (Germany)
Koen van Ingen Schenau, ASML Netherlands B.V. (Netherlands)

Published in SPIE Proceedings Vol. 9422:
Extreme Ultraviolet (EUV) Lithography VI
Obert R. Wood II; Eric M. Panning, Editor(s)

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