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Proceedings Paper

Ternary and quaternary wurtzite-type oxide semiconductors: new materials and their properties
Author(s): T. Omata
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Paper Abstract

β-NaFeO2 structure is an orthorhombic wurtzite-derived structure, of which the structural relationship with wurtzite structure is similar to that of the chalcopyrite sturcture with zincblende structure. β-LiGaO2, β-AgGaO2 and β-AgAlO2 are known as materials possessing the β-NaFeO2 structure; however, studies on the wurtzite-derived ternary oxide semiconductors are quite limited. Recently, we demonstrated the band gap engineering of zinc oxide by alloying with wurtzite-type β-AgGaO2, and the band gap of ZnO was reduced to 2.55 eV by this alloying. Very recently, a new wurtzite-type ternary compound, β-CuGaO2, was found out. Its energy band gap was 1.47 eV, and it exhibited p-type conduction. The first principle calculation indicated that β-CuGaO2 is a direct semiconductor; therefore it is suitable to use in optoelectronic devices. Taking the 1.47 eV of the band gap and p-type electronic conduction into account, β- CuGaO2 is a promising material for the thin film solar cell absorber. These new ternary oxide semiconductors possessing wurtzite-derived structure expanded the energy region that the oxide semiconductors cover into visible and near-infrared region.

Paper Details

Date Published: 13 March 2015
PDF: 6 pages
Proc. SPIE 9364, Oxide-based Materials and Devices VI, 93641L (13 March 2015); doi: 10.1117/12.2175570
Show Author Affiliations
T. Omata, Osaka Univ. (Japan)


Published in SPIE Proceedings Vol. 9364:
Oxide-based Materials and Devices VI
Ferechteh H. Teherani; David C. Look; David J. Rogers, Editor(s)

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