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Proceedings Paper

New ways of looking at masks with the SHARP EUV microscope
Author(s): Kenneth A. Goldberg; Markus P. Benk; Antoine Wojdyla; David G. Johnson; Alexander P. Donoghue
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Paper Abstract

Extreme ultraviolet (EUV) microscopy is invaluable for the development of EUV photomasks, providing detailed information for the creation of new mask processes, and reliable feedback for comparison with printing studies. The SHARP microscope at Lawrence Berkeley National Laboratory is dedicated to photomask research. It was developed with forward-looking specifications that make it well suited to the emulation of current EUV lithography tools and a variety of possible future directions. Some recent examples include (1) the demonstration of imaging with 4x numerical aperture values up to 0.625, measuring patterns with feature sizes down to 30-nm half-pitch, created with a tin-based photoresist serving as the absorber. (2) The emulation of complex, free-form illuminators used in source-mask optimization, including grayscale pupil fills. (3) Point by point phase measurement from aerial image measurements using several techniques. (4) Direct observation of non-telecentric, through-focus imaging effects that arise from the angular-dependence of the mask’s multilayer coating properties. In addition, we are preparing to extend SHARP imaging to include anamorphic optics, an emerging area of EUV lithography research.

Paper Details

Date Published: 16 March 2015
PDF: 11 pages
Proc. SPIE 9422, Extreme Ultraviolet (EUV) Lithography VI, 94221A (16 March 2015); doi: 10.1117/12.2175553
Show Author Affiliations
Kenneth A. Goldberg, Lawrence Berkeley National Lab. (United States)
Markus P. Benk, Lawrence Berkeley National Lab. (United States)
Antoine Wojdyla, Lawrence Berkeley National Lab. (United States)
David G. Johnson, Lawrence Berkeley National Lab. (United States)
Alexander P. Donoghue, Lawrence Berkeley National Lab. (United States)

Published in SPIE Proceedings Vol. 9422:
Extreme Ultraviolet (EUV) Lithography VI
Obert R. Wood II; Eric M. Panning, Editor(s)

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