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Proceedings Paper

The daunting complexity of scaling to 7NM without EUV: pushing DTCO to the extreme
Author(s): Lars Liebmann; Albert Chu; Paul Gutwin
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Paper Abstract

This paper reviews the most critical components of a ‘holistic’ DTCO flow for an advanced technology node and in doing so quantifies the differences between 7nm technology node definitions implemented with extreme ultraviolet and 193nm immersion lithography. The DTCO topics covered include: setting scaling targets for critical pitches, gear-ratios, and cell height; defining a set of patterning solutions, required RET restrictions, and resulting patterning cost; compiling physical design objectives to achieve power, performance, and area scaling; developing a set of standard cell logic cell architectures; and finally assessing achievable cell-level as well as macro-level scaling.

Paper Details

Date Published: 18 March 2015
PDF: 12 pages
Proc. SPIE 9427, Design-Process-Technology Co-optimization for Manufacturability IX, 942702 (18 March 2015); doi: 10.1117/12.2175509
Show Author Affiliations
Lars Liebmann, IBM Corp. (United States)
Albert Chu, IBM Corp. (United States)
Paul Gutwin, Cadence Design Systems, Inc. (United States)

Published in SPIE Proceedings Vol. 9427:
Design-Process-Technology Co-optimization for Manufacturability IX
John L. Sturtevant; Luigi Capodieci, Editor(s)

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