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Proceedings Paper

EUV lithography optics for sub-9nm resolution
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Paper Abstract

EUV lithography for resolution below 9 nm requires the numerical aperture of the projection optics to be significantly larger than 0.45. A configuration of 4x magnification, full field size and 6’’ reticle is not feasible anymore. The increased chief ray angle and higher NA at reticle lead to non-acceptable shadowing effects, which can only be controlled by increasing the magnification, hence reducing the system productivity. We demonstrate that the best compromise in imaging, productivity and field split is a so-called anamorphic magnification and a half field of 26 x 16.5 mm². We discuss the optical solutions for anamorphic high-NA lithography.

Paper Details

Date Published: 16 March 2015
PDF: 10 pages
Proc. SPIE 9422, Extreme Ultraviolet (EUV) Lithography VI, 94221G (16 March 2015); doi: 10.1117/12.2175488
Show Author Affiliations
Bernhard Kneer, Carl Zeiss SMT GmbH (Germany)
Sascha Migura, Carl Zeiss SMT GmbH (Germany)
Winfried Kaiser, Carl Zeiss SMT GmbH (Germany)
Jens Timo Neumann, Carl Zeiss SMT GmbH (Germany)
Jan van Schoot, ASML Netherlands B.V. (Netherlands)

Published in SPIE Proceedings Vol. 9422:
Extreme Ultraviolet (EUV) Lithography VI
Obert R. Wood II; Eric M. Panning, Editor(s)

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