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Proceedings Paper

Noise characteristics of cryo-SiCMOS multiplexed FGA readouts below 30 K
Author(s): Hong-Mook Kim
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Paper Abstract

This paper explores the noise characteristics of a 20 x 64 element cryo-SiCMOS multiplexed FPA readout of the switched MOSFET type over the temperature range 8-30 K. Both subtractive double sampling and correlated double sampling techniques were used to probe the multiplexer's output waveform during static and dynamic operation. The rms noise was observed to be a weak, decreasing function of temperature over the ranges 8-19 K and 24-30 K, while the apparent noise was excessively high in the region 19-24 K, owing to a device instability that is attributed to a fundamental property of silicon-based cryo-MOSFETs.

Paper Details

Date Published: 1 September 1990
PDF: 7 pages
Proc. SPIE 1308, Infrared Detectors and Focal Plane Arrays, (1 September 1990); doi: 10.1117/12.21750
Show Author Affiliations
Hong-Mook Kim, Aerojet Electro-Systems (United States)

Published in SPIE Proceedings Vol. 1308:
Infrared Detectors and Focal Plane Arrays
Eustace L. Dereniak; Robert E. Sampson, Editor(s)

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