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Proceedings Paper

Linear arrays of InGaAs/InP avalanche photodiodes for 1.0-1.7 um
Author(s): Donald A. Ackley; J. Hladky; M. Kazakia; S. M. Mason; G. C. Erickson; Gregory H. Olsen; Vladimir S. Ban; Stephen R. Forrest; Craig O. Staller
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Paper Abstract

Separate absorption and multiplication InGaAs/InP avalanche photodiodes (SAM-APDs) with a floating guard ring structure that is well-suited to array applications have been successfully demonstrated. Individual APDs have breakdown voltages greater than 80 V, multiplications over 40 at 100 nA dark current, and uniform spatial gain profiles. Uniform I-V characteristics and gains have been measured over linear dimensions as large as 1.2 cm. Gains over 10 at low multiplied dark currents were measured on 21 consecutive devices at the wafer level.

Paper Details

Date Published: 1 September 1990
PDF: 12 pages
Proc. SPIE 1308, Infrared Detectors and Focal Plane Arrays, (1 September 1990); doi: 10.1117/12.21735
Show Author Affiliations
Donald A. Ackley, Epitaxx, Inc. (United States)
J. Hladky, Epitaxx, Inc. (United States)
M. Kazakia, Epitaxx, Inc. (United States)
S. M. Mason, Epitaxx, Inc. (United States)
G. C. Erickson, Epitaxx, Inc. (United States)
Gregory H. Olsen, Epitaxx, Inc. (United States)
Vladimir S. Ban, Epitaxx, Inc. (United States)
Stephen R. Forrest, Univ. of Southern California (United States)
Craig O. Staller, Jet Propulsion Lab. (United States)

Published in SPIE Proceedings Vol. 1308:
Infrared Detectors and Focal Plane Arrays
Eustace L. Dereniak; Robert E. Sampson, Editor(s)

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