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Proceedings Paper

Numerical simulation of gate turn-off (GTO) light-emitting thyristors
Author(s): Valeri Korobov; Vladimir V. Mitin; Zinovi S. Gribnikov
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Paper Abstract

Results of 2D numerical simulation of a four-terminal light emitting thyristor in the regime of incomplete turn-off are presented. This regime is characterized by the negative gate current, which is insufficient to turn the device off. A part of the middle p-n junction is reverse biased and blocks the current, whereas the remaining part of the structure is highly conducting and light-emitting. The size of the light-emitting area and the light intensity in this region can be controlled using small gate signals. Gates make it possible also to control the position of the light-emitting region. The utilization of incomplete turn-off principle can be used for light intensity modulation and switching purposes.

Paper Details

Date Published: 18 August 1995
PDF: 12 pages
Proc. SPIE 2622, Optical Engineering Midwest '95, (18 August 1995); doi: 10.1117/12.216830
Show Author Affiliations
Valeri Korobov, Wayne State Univ. (United States)
Vladimir V. Mitin, Wayne State Univ. (United States)
Zinovi S. Gribnikov, Wayne State Univ. (United States)

Published in SPIE Proceedings Vol. 2622:
Optical Engineering Midwest '95
Rudolph P. Guzik, Editor(s)

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