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Proceedings Paper

Growth and characterization of laser-ablated boron nitride thin films
Author(s): Zhouling Wu; Roger W. Pryor; K. R. Padmanabhan; S. Villanueva; Robert L. Thomas
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Paper Abstract

Recent work is reported on the growth and characterization of boron nitride thin films on 1 cm2 Si (100) substrates by a newly developed reactive laser ablation technique. The exact nature of the resulting films is highly process dependent and is analyzed by ion channeling and Fourier transform infrared spectroscopy (FTIR). The thermal properties of these films are studied by thermal wave analysis, and they are found to be highly dependent on the crystallographic structure. This value is believed to be the best thermal conductivity measured for boron nitride films to date.

Paper Details

Date Published: 14 July 1995
PDF: 10 pages
Proc. SPIE 2428, Laser-Induced Damage in Optical Materials: 1994, (14 July 1995); doi: 10.1117/12.213716
Show Author Affiliations
Zhouling Wu, Eastern Michigan Univ. (United States)
Roger W. Pryor, Wayne State Univ. (United States)
K. R. Padmanabhan, Wayne State Univ. (United States)
S. Villanueva, Wayne State Univ. (United States)
Robert L. Thomas, Wayne State Univ. (United States)

Published in SPIE Proceedings Vol. 2428:
Laser-Induced Damage in Optical Materials: 1994
Harold E. Bennett; Arthur H. Guenther; Mark R. Kozlowski; Brian Emerson Newnam; M. J. Soileau, Editor(s)

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