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Proceedings Paper

Repairing x-ray masks with Ta absorbers using focused ion beams
Author(s): Ikuo Okada; Yasunao Saitoh; Takashi Ohkubo; Misao Sekimoto; Tadahito Matsuda
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Paper Abstract

A focus ion beam system was used to repair x-ray masks with Ta absorbers. To repair opaque defects, excess Ta is removed by ion milling. Since the wall of the milled pattern is tapered compared to the absorber patterns of the mask, milling parameters such as the ion dose are justified by printing the repaired pattern on the resist with the SR exposure system. Clear repairs are made with Ta deposited using a organometallic material. Since the Ta content of the deposit was about 30%, a Ta deposition layer thicker than 1.2-micrometers is necessary to keep the contrast of the x-rays high. The repaired Ta absorber patterns have high chemical durability and are not damaged by wet cleaning with strong acid. We printed on resists with repaired masks and confirmed that the defects were completely repaired.

Paper Details

Date Published: 3 July 1995
PDF: 6 pages
Proc. SPIE 2512, Photomask and X-Ray Mask Technology II, (3 July 1995); doi: 10.1117/12.212775
Show Author Affiliations
Ikuo Okada, NTT LSI Labs. (Japan)
Yasunao Saitoh, NTT LSI Labs. (Japan)
Takashi Ohkubo, NTT Advanced Technology Corp. (Japan)
Misao Sekimoto, NTT LSI Labs. (Japan)
Tadahito Matsuda, NTT LSI Labs. (Japan)

Published in SPIE Proceedings Vol. 2512:
Photomask and X-Ray Mask Technology II
Hideo Yoshihara, Editor(s)

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