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Proceedings Paper

Performance improvement in electron-beam reticle writing system
Author(s): Hirohito Anze; Satoshi Yamasaki; Shuichi Tamamushi; Yoji Ogawa; Eiji Murakami; Ryoichi Hirano; Kazuto Matsuki
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Paper Abstract

Several experiments in order to improve throughput and accuracy have been carried out on electron beam reticle writing system which adopts variably shaped beam, vector scanning, and continuously moving stage. Stage speed optimization process by the stripe is introduced to reduce the writing time loss which arises from constant stage speed through writing a reticle. As a result, writing time decreases to 2/3 on average and the throughput of 2 reticles of 64 Mbit DRAM class per hour can be realized. Substrate clamping configuration for writing and measuring machine affects the substrate flexure and deteriorates the global positioning accuracy. The change of clamping point number form 4 to 3 for each machine improves the reproducibility of global distortion to 47% or more. The multipass writing method is effective to reduce stripe stitching error and fluctuation of the main-field position. In the case of multiplicity of 4, stripe stitching error and fluctuation of the main-field are 20 nm and 13 nm, respectively. The writing time ratio compared with single-pass writing is 1.6 even in 4-pass writing. Therefore, throughput should also be emphasized in view of accuracy improvements.

Paper Details

Date Published: 3 July 1995
PDF: 7 pages
Proc. SPIE 2512, Photomask and X-Ray Mask Technology II, (3 July 1995); doi: 10.1117/12.212764
Show Author Affiliations
Hirohito Anze, Toshiba Corp. (Japan)
Satoshi Yamasaki, Toshiba Corp. (Japan)
Shuichi Tamamushi, Toshiba Corp. (Japan)
Yoji Ogawa, Toshiba Corp. (Japan)
Eiji Murakami, Toshiba Corp. (Japan)
Ryoichi Hirano, Toshiba Corp. (Japan)
Kazuto Matsuki, Toshiba Corp. (Japan)

Published in SPIE Proceedings Vol. 2512:
Photomask and X-Ray Mask Technology II
Hideo Yoshihara, Editor(s)

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