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Proceedings Paper

Fabrication of multilayer optics by sputtering: application to EUV optics with greater than 30% normal reflectance
Author(s): Palmer N. Peters; Richard B. Hoover; Richard N. Watts; Charles Tarrio; Arthur B. C. Walker Jr.
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Paper Abstract

A planar diode, rf-sputtering system, modified to triode operation by addition of a ring filament surrounding the anode, is described. Alternately timed sputtering is used to fabricate multilayer films with good characteristics, predominantly in the extreme ultraviolet (EUV) range of 15 to 20 nm. Fabrication of stable films of niobium/silicon is discussed, along with characterization results that utilized x-ray diffraction (XRD) and synchrotron source reflectance measurements. Characteristics of an optic that was designed and used to photograph the sun at 18.0 nm from a rocket-borne experiment are described.

Paper Details

Date Published: 20 June 1995
PDF: 6 pages
Proc. SPIE 2515, X-Ray and Extreme Ultraviolet Optics, (20 June 1995); doi: 10.1117/12.212625
Show Author Affiliations
Palmer N. Peters, NASA Marshall Space Flight Ctr. (United States)
Richard B. Hoover, NASA Marshall Space Flight Ctr. (United States)
Richard N. Watts, National Institute of Standards and Technology (United States)
Charles Tarrio, National Institute of Standards and Technology (United States)
Arthur B. C. Walker Jr., Stanford Univ. (United States)

Published in SPIE Proceedings Vol. 2515:
X-Ray and Extreme Ultraviolet Optics
Richard B. Hoover; Arthur B. C. Walker Jr., Editor(s)

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