We propose a novel design of semiconductor lasers operating at 1.3 micrometers and 1.5 micrometers . A distinctive attribute of the proposed design is that the AlInGaAs active region is surrounded by an electron stopper layer on the p-side and a hole stopper layer on the n-side. The stopper layers do not impede the carrier injection into the active region and at the same time reduce the thermionic emission of carriers out of the active region. Utilization of stopper layers allows to increase the value of internal quantum efficiency and select the waveguide material corresponding to the optimum optical confinement factor value.

Date Published: 19 June 1995
PDF: 10 pages
Proc. SPIE 2399, Physics and Simulation of Optoelectronic Devices III, (19 June 1995); doi: 10.1117/12.212515

Published in SPIE Proceedings Vol. 2399:
Physics and Simulation of Optoelectronic Devices III
Marek Osinski; Weng W. Chow, Editor(s)