For lasers based on asymmetric quantum-well heterostructures comprising three different quantum wells and barrier layers with a complex potential profile, current carrier injection and radiation emitting processes have been considered. The analysis performed by using rate equations has shown that a regime of regular pulse generation at remote wavelengths is practicle. The radiation pulsation process is accompanied by oscillations of the carrier injection efficiency into quantum wells. At certain parameters of the laser structures it is possible to realize radiation bistable switching-on or the regime where relative powers at different wavelengths change with increasing the pump current. The injection efficiency has been determined by solving the Poisson equation and continuity conditions for electron and hole currents. Carrier tunneling through potential barriers between the quantum wells has been taken into account. Calculations have been performed for the GaAs - Al_xGa_{1- x}As system.

Date Published: 19 June 1995
PDF: 6 pages
Proc. SPIE 2399, Physics and Simulation of Optoelectronic Devices III, (19 June 1995); doi: 10.1117/12.212510

Published in SPIE Proceedings Vol. 2399:
Physics and Simulation of Optoelectronic Devices III
Marek Osinski; Weng W. Chow, Editor(s)