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Proceedings Paper

Negative differential gain in strained-layer InGaAs quantum well laser diodes
Author(s): Petr Georgievich Eliseev; Aleksandr E. Drakin
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Paper Abstract

Experimental evidences and modeling calculations are given for the existence of negative differential mode gain in ridge-waveguide laser diodes on the base of strained-layer InGaAs/GaAs quantum-well structures. The phenomenon is found to be related to a mode formation in an active 2D waveguide with monotonic increase of the material gain. The mode gain is calculated in single- and double-QW laser structures at various waveguide parameters including variation of the lateral built-in index step.

Paper Details

Date Published: 19 June 1995
PDF: 5 pages
Proc. SPIE 2399, Physics and Simulation of Optoelectronic Devices III, (19 June 1995); doi: 10.1117/12.212506
Show Author Affiliations
Petr Georgievich Eliseev, P.N. Lebedev Physics Institute (Russia)
Aleksandr E. Drakin, P.N. Lebedev Physics Institute (Russia)

Published in SPIE Proceedings Vol. 2399:
Physics and Simulation of Optoelectronic Devices III
Marek Osinski; Weng W. Chow, Editor(s)

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