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Proceedings Paper

Photoconducting ultraviolet detectors based on GaN films grown by electron cyclotron resonance molecular beam epitaxy
Author(s): Mira Misra; Theodore D. Moustakas; Robert P. Vaudo; Rajminder Singh; Kanai S. Shah
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Paper Abstract

We report for the first time, fabrication of photoconducting UV detectors made from GaN films grown by molecular beam epitaxy. Semi-insulating GaN films were grown by the method of electron cyclotron resonance microwave plasma-assisted molecular beam epitaxy. Photoconductive devices with interdigitated electrodes were fabricated and their photoconducting properties were investigated. In this paper we report on the performance of the detectors in terms of UV responsivity, gain-quantum efficiency product, spectral response, and response time. We have measured responsivity of 125A/W and gain-quantum efficiency product of 600 at 254nm and 25V. The response time was measured to be on the order of 20ns for our detectors, corresponding to a bandwidth of 25Mhz. The spectral response showed a sharp long-wavelength cutoff at 265nm, and remained constant in the 200nm to 365nm range. The response of the detectors to low-energy x-rays was measured and found to be linear for x- rays with energies ranging from 60kVp to 90kVp.

Paper Details

Date Published: 15 June 1995
PDF: 9 pages
Proc. SPIE 2519, X-Ray and Ultraviolet Sensors and Applications, (15 June 1995); doi: 10.1117/12.211915
Show Author Affiliations
Mira Misra, Radiation Monitoring Devices, Inc. (United States)
Theodore D. Moustakas, Boston Univ. (United States)
Robert P. Vaudo, Boston Univ. (United States)
Rajminder Singh, Boston Univ. (United States)
Kanai S. Shah, Radiation Monitoring Devices, Inc. (United States)

Published in SPIE Proceedings Vol. 2519:
X-Ray and Ultraviolet Sensors and Applications
Richard B. Hoover; Mark Bennett Williams, Editor(s)

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