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Proceedings Paper

Novel homojunction interfacial workfunction internal photoemission (HIWIP) tunable far-infrared detectors for astronomy
Author(s): A. G. Unil Perera; Henry X. Yuan; Jeong-Woo Choe; M. H. Francombe
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Paper Abstract

A novel homojunction interfacial workfunction internal photoemission (HIWIP) far-infrared (FIR) detector based on the interfacial workfunction (IWF) between a heavily doped absorber/emitter layer and a lightly doped (or intrinsic) layer is reported. The detector structures are classified according to their emitter layer doping concentrations (Nd). The threshold wavelength ((lambda) t) is tunable in the IR wavelength range by changing Nd and bias voltage. This detector concept has been successfully demonstrated using forward biased commercial Si and Ge p-i-n diodes at 4.2 K. Threshold wavelengths ((lambda) t) from around 40 - 220 micrometers for Si and up to 240 micrometers for Ge were experimentally obtained. A theoretical investigation including an estimation of workfunction dependence on Nd, quantum efficiency calculations, and dark current analysis is reported. Based on these results, the detector noise equivalent power (NEP) limited by thermal noise and background noise is calculated.

Paper Details

Date Published: 6 June 1995
PDF: 12 pages
Proc. SPIE 2475, Infrared Detectors and Instrumentation for Astronomy, (6 June 1995); doi: 10.1117/12.211244
Show Author Affiliations
A. G. Unil Perera, Georgia State Univ. (United States)
Henry X. Yuan, Georgia State Univ. (United States)
Jeong-Woo Choe, Georgia State Univ. (United States)
M. H. Francombe, Georgia State Univ. (United States)

Published in SPIE Proceedings Vol. 2475:
Infrared Detectors and Instrumentation for Astronomy
Albert M. Fowler, Editor(s)

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