We investigate an all dry etching process of the development-free vapor photolithography (DFVP) with 315 XeF excimer laser. After masked exposure, SiO₂ on a silicon wafer and beneath a photoaccelerator polymer layer can be directly etched by etching vapor which is a mixture of HF, water and N₂. Ultimately, patterns with 0.4 micron resolution were obtained. We have investigated the effect of the etching temperature and time, exposure energy and 5-ni-troacenaphthene concentration on the resolution and discussed the mechanism of DFVP.

Date Published: 9 June 1995
PDF: 10 pages
Proc. SPIE 2438, Advances in Resist Technology and Processing XII, (9 June 1995);

Published in SPIE Proceedings Vol. 2438:
Advances in Resist Technology and Processing XII
Robert D. Allen, Editor(s)