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Proceedings Paper

Development-free vapor laser photolithography with 0.4-um resolution
Author(s): Yongyuan Yang; Xiaoyin Hong; Liming Dai; Albert W.H. Mau
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Paper Abstract

We investigate an all dry etching process of the development-free vapor photolithography (DFVP) with 315 XeF excimer laser. After masked exposure, SiO2 on a silicon wafer and beneath a photoaccelerator polymer layer can be directly etched by etching vapor which is a mixture of HF, water and N2. Ultimately, patterns with 0.4 micron resolution were obtained. We have investigated the effect of the etching temperature and time, exposure energy and 5-ni-troacenaphthene concentration on the resolution and discussed the mechanism of DFVP.

Paper Details

Date Published: 9 June 1995
PDF: 10 pages
Proc. SPIE 2438, Advances in Resist Technology and Processing XII, (9 June 1995);
Show Author Affiliations
Yongyuan Yang, Institute of Photographic Chemistry (China)
Xiaoyin Hong, Tsinghua Univ. (China)
Liming Dai, CSIRO (Australia)
Albert W.H. Mau, CSIRO (Australia)

Published in SPIE Proceedings Vol. 2438:
Advances in Resist Technology and Processing XII
Robert D. Allen, Editor(s)

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