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Proceedings Paper

Development-free vapor laser photolithography with 0.4-um resolution
Author(s): Yongyuan Yang; Xiaoyin Hong; Liming Dai; Albert W.H. Mau
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Paper Abstract

We investigate an all dry etching process of the development-free vapor photolithography (DFVP) with 315 XeF excimer laser. After masked exposure, SiO2 on a silicon wafer and beneath a photoaccelerator polymer layer can be directly etched by etching vapor which is a mixture of HF, water and N2. Ultimately, patterns with 0.4 micron resolution were obtained. We have investigated the effect of the etching temperature and time, exposure energy and 5-ni-troacenaphthene concentration on the resolution and discussed the mechanism of DFVP.

Paper Details

Date Published: 9 June 1995
PDF: 10 pages
Proc. SPIE 2438, Advances in Resist Technology and Processing XII, (9 June 1995); doi: 10.1117/12.210405
Show Author Affiliations
Yongyuan Yang, Institute of Photographic Chemistry (China)
Xiaoyin Hong, Tsinghua Univ. (China)
Liming Dai, CSIRO (Australia)
Albert W.H. Mau, CSIRO (Australia)

Published in SPIE Proceedings Vol. 2438:
Advances in Resist Technology and Processing XII
Robert D. Allen, Editor(s)

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