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Proceedings Paper

Molecular simulation of photoresists I: basic techniques for molecular simulation
Author(s): Andrew J. Blakeney; Lawrence Ferreira; Nicholas M. Reynolds
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Paper Abstract

Recent advances in computer hardware and software have provided the capability to simulate complex mixtures of compounds on a molecular level. These tools provide the potential for exploration of resist chemistry and mechanism on a molecular level with visual feedback. However, there are still limitations of software and hardware and time which require simplification of the simulations. Thus extensive methods development will be required to be able to produce simulations useful to predict resist properties. This paper discusses the basics of photoresist molecular simulation techniques, limitations of the current techniques, and the potential for using molecular simulations to explore various aspects of photoresist performance, particularly novolac-novolac and novolac-diazonaphthoquinone photoactive compound (DNQ PAC) hydrogen bonding.

Paper Details

Date Published: 9 June 1995
PDF: 12 pages
Proc. SPIE 2438, Advances in Resist Technology and Processing XII, (9 June 1995); doi: 10.1117/12.210387
Show Author Affiliations
Andrew J. Blakeney, OCG Microelectronic Materials, Inc. (United States)
Lawrence Ferreira, OCG Microelectronic Materials, Inc. (United States)
Nicholas M. Reynolds, Molecular Simulations, Inc. (United States)


Published in SPIE Proceedings Vol. 2438:
Advances in Resist Technology and Processing XII
Robert D. Allen, Editor(s)

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