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Proceedings Paper

Mechanism of amine additive in chemically amplified resist visualized by using Monte Carlo simulation
Author(s): Tohru Ushirogouchi; Koji Asakawa; Makoto Nakase; Akinori Hongu
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Paper Abstract

A novel simulator using the Monte-Carlo method, which simulates molecular-like movements and reactions in chemically amplified resist systems, has been developed in order to clarify the mechanism of amine additive. The simulation program simulates diffusion phenomena with random-walked acids and amine molecules, and reactions of deactivation (neutralization) and inhibitor cleavage in every movement of the molecules. It was found that the amine in the exposed area was rapidly deactivated, and the concentration profile of the remaining amine was rapidly changed to an inversely shaped profile of that of the acid. This means that the remaining amine prevents diffusion of acids outside the exposed area by functioning as a barrier during almost the whole period of post-exposure bake (PEB). These concentration profiles lead to an enhancement of stability of pattern sizes and reduction of edge roughness of the pattern. Environmental stability was also calculated, and amine additive was also found to prevent contamination from the environment in the initial period of the PEB.

Paper Details

Date Published: 9 June 1995
PDF: 8 pages
Proc. SPIE 2438, Advances in Resist Technology and Processing XII, (9 June 1995); doi: 10.1117/12.210384
Show Author Affiliations
Tohru Ushirogouchi, Toshiba Corp. (Japan)
Koji Asakawa, Toshiba Corp. (Japan)
Makoto Nakase, Toshiba Corp. (Japan)
Akinori Hongu, Toshiba Corp. (Japan)

Published in SPIE Proceedings Vol. 2438:
Advances in Resist Technology and Processing XII
Robert D. Allen, Editor(s)

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