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Proceedings Paper

UV pretreatments for improved etching of organic antireflective coating (ARC) layer
Author(s): Linda J. Insalaco; Vandana N. Krishnamurthy; John L. Sturtevant; James C. Mitchener
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Paper Abstract

In this paper we present a technique utilizing intense UV exposure to alter the chemical properties of an organic antireflective material such that dry etch performance is improved. By monitoring the ARC thickness before and after UV exposure, it can be demonstrated that prolonged UV exposure coupled with a specific range of substrate temperatures can result in a dramatic reduction in ARC thickness. Similar measurements taken before and after ARC etch reveal an improvement in etch rate in ARC samples previously subjected to intense UV exposure. Changes in ARC structure and etch performance are presented as functions of UV wavelengths, substrate temperature, and exposure time.

Paper Details

Date Published: 9 June 1995
PDF: 11 pages
Proc. SPIE 2438, Advances in Resist Technology and Processing XII, (9 June 1995); doi: 10.1117/12.210379
Show Author Affiliations
Linda J. Insalaco, Fusion Semiconductor Systems (United States)
Vandana N. Krishnamurthy, Brewer Science, Inc. (United States)
John L. Sturtevant, SEMATECH (United States)
James C. Mitchener, Novellus Systems (United States)

Published in SPIE Proceedings Vol. 2438:
Advances in Resist Technology and Processing XII
Robert D. Allen, Editor(s)

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