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Proceedings Paper

Photolithography process characterization and 3D simulation using track-mounted development rate monitor data
Author(s): Saraubh Dutta Chowdhury; David W. Alexander; Mark Goldman; Alan W. Kukas; Nigel R. Farrar; Clifford H. Takemoto; Bruce W. Smith; Linard Karklin
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Paper Abstract

A track-mounted, in-situ dissolution rate monitor (DRM) is used to study the impact of exposure variations on g-line, i-line and DUV positive chemically amplified resists. In the i- line case, a comparative study between constant spray and a spray/puddle process was undertaken. In all cases, modeling parameters were extracted from the track-mounted DRM data and entered into 2D and 3D simulators using an experimentally generated development rate vs. PAC concentration table. Simulated profiles were compared with actual SEM cross- sections. Whenever possible, DRM traces were used to analyze standing waves, surface inhibition effects and quantify resist performance by calculating contrast. For the g-line case, the impact of PEB temperature upon the standing wave effects, as quantified by the in-situ DRM data, was studied.

Paper Details

Date Published: 9 June 1995
PDF: 14 pages
Proc. SPIE 2438, Advances in Resist Technology and Processing XII, (9 June 1995); doi: 10.1117/12.210364
Show Author Affiliations
Saraubh Dutta Chowdhury, Site Services, Inc. (United States)
David W. Alexander, Site Services, Inc. (United States)
Mark Goldman, Site Services, Inc. (United States)
Alan W. Kukas, Site Services, Inc. (United States)
Nigel R. Farrar, Hewlett-Packard Co. (United States)
Clifford H. Takemoto, National Semiconductor Corp. (United States)
Bruce W. Smith, Rochester Institute of Technology (United States)
Linard Karklin, L. K. Consulting (United States)

Published in SPIE Proceedings Vol. 2438:
Advances in Resist Technology and Processing XII
Robert D. Allen, Editor(s)

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