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Proceedings Paper

Effects of substrate treatment in positive chemically amplified resist
Author(s): Akihiro Usujima; Kazuki Tago; Akira Oikawa; Kenji Nakagawa
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Paper Abstract

We fabricated resist patterns on a silicon nitride (Si3N4) substrate using a KrF excimer laser stepper and a positive chemically amplified resist. The cross-sectional views of the resist patterns revealed `footing,' so we carried out experiments to find the cause of this. We investigated the relationship between the resist profile and the Si3N4 film thickness, or the storage time of the substrate. We also tried to improve the footing profile with some substrate treatments. As a result, we revealed that substrate treatment using oxygen plasma is extremely effective in diminishing footing. Therefore, the effects of substrate treatment were investigated using electron spectroscopy for chemical analysis (ESCA) and gas-chromatograph mass-spectrometry (GC-MS). From these results, we studied the cause of footing.

Paper Details

Date Published: 9 June 1995
PDF: 11 pages
Proc. SPIE 2438, Advances in Resist Technology and Processing XII, (9 June 1995); doi: 10.1117/12.210359
Show Author Affiliations
Akihiro Usujima, Fujitsu Ltd. (Japan)
Kazuki Tago, Kyusyu Fujitsu Electronics Ltd. (Japan)
Akira Oikawa, Fujitsu Ltd. (Japan)
Kenji Nakagawa, Fujitsu Ltd. (Japan)

Published in SPIE Proceedings Vol. 2438:
Advances in Resist Technology and Processing XII
Robert D. Allen, Editor(s)

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