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Proceedings Paper

High-resolution surface imaging process using difunctional silylating reagent B(DMA)MS for ArF excimer laser lithography
Author(s): Katsumi Maeda; Takeshi Ohfuji; Naoaki Aizaki; Etsuo Hasegawa
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Paper Abstract

This paper describes the silylation properties and the lithographic performance of ArF (193 nm) surface imaging process with bis(dimethylamino)methylsilane [B(DMA)MS]. The silicon concentration of silylated region with B(DMA)MS in liquid phase is much higher (2 times) than that for the conventional silylation with dimethylsilyldimethylamine (DMSDMA) in vapor phase. The excellent resolution of 0.12 micrometers L/S and practical DOF (1.0 micrometers in a range for 0.18 micrometers L/S) have been achieved using ArF exposure system with a conventional binary mask under a normal illumination. Further, the resolution of 0.088 micrometers has been obtained with a Levenson-type phase shifting mask.

Paper Details

Date Published: 9 June 1995
PDF: 9 pages
Proc. SPIE 2438, Advances in Resist Technology and Processing XII, (9 June 1995); doi: 10.1117/12.210357
Show Author Affiliations
Katsumi Maeda, NEC Corp. (Japan)
Takeshi Ohfuji, NEC Corp. (Japan)
Naoaki Aizaki, NEC Corp. (Japan)
Etsuo Hasegawa, NEC Corp. (Japan)

Published in SPIE Proceedings Vol. 2438:
Advances in Resist Technology and Processing XII
Robert D. Allen, Editor(s)

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