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Proceedings Paper

Application of pattern recognition in mix-and-match lithography
Author(s): Warren W. Flack; Gary E. Flores; Thinh Tran
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Paper Abstract

Mix-and-match lithography continues to gain acceptance as a valuable strategy for reducing capital costs and increasing throughput productivity in semiconductor manufacturing. The successful implementation of mix-and-match lithography requires consideration of the unique characteristics of all systems being matched. Among these issues are alignment target placement and alignment strategy. The alignment system for each stepper manufacturer uses specially designed targets for wafer alignment. However, the wafer area available for dedicated alignment targets is typically restricted to maximize the quantity of production die per wafer. One approach to remove the target area limitation is to implement an alignment system based on pattern recognition techniques.

Paper Details

Date Published: 26 May 1995
PDF: 15 pages
Proc. SPIE 2440, Optical/Laser Microlithography VIII, (26 May 1995); doi: 10.1117/12.209317
Show Author Affiliations
Warren W. Flack, Ultratech Stepper, Inc. (United States)
Gary E. Flores, Ultratech Stepper, Inc. (United States)
Thinh Tran, Ultratech Stepper, Inc. (United States)

Published in SPIE Proceedings Vol. 2440:
Optical/Laser Microlithography VIII
Timothy A. Brunner, Editor(s)

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