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Proceedings Paper

Subquarter micron optical lithography with practical superresolution technique
Author(s): Tohru Ogawa; Masaya Uematsu; Fumikatsu Uesawa; Mitsumori Kimura; Hideo Shimizu; Tatsuji Oda
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Paper Abstract

Practical resolution, which is defined as the minimum geometry for a 1.0 micrometers depth of focus, in conventional krypton fluoride (KrF) excimer laser (248 nm) lithography is 0.30 micrometers . A new illumination technique, which uses a weak quadruple effect to enhance the depth of focus and to solve the current problems in the off-axis illumination techniques, has been developed. This new illumination technique is suitable for use with the attenuated phase shifting mask. With this combination technique, a 1.8 micrometers depth of focus using a 0.45 NA KrF excimer laser stepper can be achieved without a secondary peak in the distribution of light intensity for the various duties 0.30 micrometers space patterns. Even for hole patterns, a 2.0 micrometers common depth of focus can be achieved. These results indicate that KrF excimer laser lithography is a powerful candidate for beyond 0.25 micrometers -rule devices. It is also confirmed that i-line lithography is an expectable candidate for the second generation of 0.35 micrometers -rule devices.

Paper Details

Date Published: 26 May 1995
PDF: 12 pages
Proc. SPIE 2440, Optical/Laser Microlithography VIII, (26 May 1995); doi: 10.1117/12.209302
Show Author Affiliations
Tohru Ogawa, Sony Corp. (Japan)
Masaya Uematsu, Sony Corp. (Japan)
Fumikatsu Uesawa, Sony Corp. (Japan)
Mitsumori Kimura, Sony Corp. (Japan)
Hideo Shimizu, Sony Corp. (Japan)
Tatsuji Oda, Sony Corp. (Japan)

Published in SPIE Proceedings Vol. 2440:
Optical/Laser Microlithography VIII
Timothy A. Brunner, Editor(s)

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