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Proceedings Paper

Antireflection coating process characterization and improvement for DUV lithography at 0.25 um: ground rules
Author(s): John L. Sturtevant; M. Chaara; R. Elliot; Larry David Hollifield Jr.; Robert A. Soper; David R. Stark; Nathan S. Thane; John S. Petersen
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Paper Abstract

The use of organic antireflection layers (ARL) for KrF laser-based DUV lithography at 0.25 micrometers groundrules has been studied. Critical performance considerations include swing curve suppression, coating conformity over topography, defectivity, and etch process control. The use of currently available ARL materials over a range of thickness values reported, and it is shown that substantial swing effects still exist at 0.25 micrometers dimensions, in agreement with theoretical prediction. ARL/resist interfacial defect are seen to be minimized with a new ARL formulation. Atomic Force Microscopy (AFM) data is presented which indicate significant ARL and resist thickness variations over product topography. Preliminary results on an improved ARL etch process and a removable ARL process based upon a uv-harden treatment are also reported. Significant improvements in materials and processes are required for a 0.25 micrometers manufacturing capable system.

Paper Details

Date Published: 26 May 1995
PDF: 12 pages
Proc. SPIE 2440, Optical/Laser Microlithography VIII, (26 May 1995); doi: 10.1117/12.209288
Show Author Affiliations
John L. Sturtevant, SEMATECH Corp. (United States)
M. Chaara, SEMATECH Corp. (United States)
R. Elliot, SEMATECH Corp. (United States)
Larry David Hollifield Jr., SEMATECH Corp. (United States)
Robert A. Soper, SEMATECH Corp. (United States)
David R. Stark, SEMATECH Corp. (United States)
Nathan S. Thane, SEMATECH Corp. (United States)
John S. Petersen, SEMATECH (United States)

Published in SPIE Proceedings Vol. 2440:
Optical/Laser Microlithography VIII
Timothy A. Brunner, Editor(s)

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