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Proceedings Paper

Lithography strategy for printing 0.35 um devices
Author(s): Satyendra S. Sethi; Mark William Barrick; Jason Massey; C. Froelich; Michele R. Weilemann; F. Garza
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Paper Abstract

This paper discusses two lithography strategies for printing 0.35 micrometers features: broad band deep ultraviolet (DUV) lithography using a chemically amplified resist dyed to an optical density of 0.40 per micrometers and the use of high numerical aperture (NA) i-line lithography with an advanced i-line resist. Lithographic results such as linearity, exposure and focus latitudes, reflective notching control, and post exposure bake (PEB) delay time are compared. Results on product wafers are also illustrated. Finally, experimental data is compared with PROLITH/2 simulations.

Paper Details

Date Published: 26 May 1995
PDF: 14 pages
Proc. SPIE 2440, Optical/Laser Microlithography VIII, (26 May 1995); doi: 10.1117/12.209277
Show Author Affiliations
Satyendra S. Sethi, Motorola (United States)
Mark William Barrick, Motorola (United States)
Jason Massey, Motorola (United States)
C. Froelich, Motorola (United States)
Michele R. Weilemann, Motorola (United States)
F. Garza, Motorola (United States)


Published in SPIE Proceedings Vol. 2440:
Optical/Laser Microlithography VIII
Timothy A. Brunner, Editor(s)

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