Proceedings Paper
Study of EUV contact lithography with a compact laser plasma source| Format | Member Price | Non-Member Price |
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Paper Abstract
It is performed by optimizing the source that experiments to demonstrate the feasibility of a small laser for EUV contact lithography. Using copper, steel and tungsten targets, the depth of development of DCPA resists exposed through 50 1/mm, 100 1/mm Cu free-standing nets are obtained for times from 10 to 40 min. A method of adding a pinhole is used to estimate the qualities of pattern of developed resist.
Paper Details
Date Published: 19 May 1995
PDF: 11 pages
Proc. SPIE 2437, Electron-Beam, X-Ray, EUV, and Ion-Beam Submicrometer Lithographies for Manufacturing V, (19 May 1995); doi: 10.1117/12.209182
Published in SPIE Proceedings Vol. 2437:
Electron-Beam, X-Ray, EUV, and Ion-Beam Submicrometer Lithographies for Manufacturing V
John M. Warlaumont, Editor(s)
PDF: 11 pages
Proc. SPIE 2437, Electron-Beam, X-Ray, EUV, and Ion-Beam Submicrometer Lithographies for Manufacturing V, (19 May 1995); doi: 10.1117/12.209182
Show Author Affiliations
Yubin Guo, Changchun Institute of Optics and Fine Mechanics (China)
Futian Li, Changchun Institute of Optics and Fine Mechanics (China)
Published in SPIE Proceedings Vol. 2437:
Electron-Beam, X-Ray, EUV, and Ion-Beam Submicrometer Lithographies for Manufacturing V
John M. Warlaumont, Editor(s)
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