Proceedings Paper
Low-voltage electron-beam lithography linked to photolithography| Format | Member Price | Non-Member Price |
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Paper Abstract
An advanced resist process is introduced connecting the high resolution of low voltage electron beam lithography (LV-EBL) and the high productivity of photolithography using a surface imaging technique. A method to overlay these two exposures will be introduced. A pattern transfer below 100 nm is achieved.
Paper Details
Date Published: 19 May 1995
PDF: 10 pages
Proc. SPIE 2437, Electron-Beam, X-Ray, EUV, and Ion-Beam Submicrometer Lithographies for Manufacturing V, (19 May 1995); doi: 10.1117/12.209178
Published in SPIE Proceedings Vol. 2437:
Electron-Beam, X-Ray, EUV, and Ion-Beam Submicrometer Lithographies for Manufacturing V
John M. Warlaumont, Editor(s)
PDF: 10 pages
Proc. SPIE 2437, Electron-Beam, X-Ray, EUV, and Ion-Beam Submicrometer Lithographies for Manufacturing V, (19 May 1995); doi: 10.1117/12.209178
Show Author Affiliations
Lothar Bauch, Institut fuer Halbleiterphysik Frankfurt (Oder) GmbH (Germany)
Monika Boettcher, Institut fuer Halbleiterphysik Frankfurt (Oder) GmbH (Germany)
Monika Boettcher, Institut fuer Halbleiterphysik Frankfurt (Oder) GmbH (Germany)
Ulrich Haak, Institut fuer Halbleiterphysik Frankfurt (Oder) GmbH (Germany)
Ulrich A. Jagdhold, Institut fuer Halbleiterphysik Frankfurt (Oder) GmbH (Germany)
Ulrich A. Jagdhold, Institut fuer Halbleiterphysik Frankfurt (Oder) GmbH (Germany)
Published in SPIE Proceedings Vol. 2437:
Electron-Beam, X-Ray, EUV, and Ion-Beam Submicrometer Lithographies for Manufacturing V
John M. Warlaumont, Editor(s)
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