An advanced resist process is introduced connecting the high resolution of low voltage electron beam lithography (LV-EBL) and the high productivity of photolithography using a surface imaging technique. A method to overlay these two exposures will be introduced. A pattern transfer below 100 nm is achieved.

Date Published: 19 May 1995
PDF: 10 pages
Proc. SPIE 2437, Electron-Beam, X-Ray, EUV, and Ion-Beam Submicrometer Lithographies for Manufacturing V, (19 May 1995); doi: 10.1117/12.209178

Published in SPIE Proceedings Vol. 2437:
Electron-Beam, X-Ray, EUV, and Ion-Beam Submicrometer Lithographies for Manufacturing V
John M. Warlaumont, Editor(s)